V. Voronkov

Electrical and Electronic Engineering · 2000–2014

A researcher in the Science corpus: 4 papers; trusts 3 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom V. Voronkov trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. K. Bothe
  2. Jan Schmidt
  3. D. Macdonald

Who trusts V. Voronkov overall

  1. T. Dullweber

Papers from V. Voronkov's perspective

Ordered by how strongly the researchers V. Voronkov trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Electronically activated boron-oxygen-related recombination centers in crystalline silicon
  2. General parameterization of Auger recombination in crystalline silicon
  3. Overview on SiN surface passivation of crystalline silicon solar cells
  4. Mechanisms of transition-metal gettering in silicon
  5. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
  6. Large Deviations Estimates for Some Non-local Equations I. Fast Decaying Kernels and Explicit Bounds
  7. Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior
  8. Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping
  9. Oxygen diffusion and precipitation in Czochralski silicon
  10. Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature

Their papers