General parameterization of Auger recombination in crystalline silicon
487 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/84ef69c7299ab7d3eb5ffed7e1d0022cf1150d80
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Limiting efficiency of crystalline silicon solar cells due to Coulomb‐enhanced Auger recombination (2003, unknown): “In this paper, we present new calculations for the limiting efficiency of silicon solar cells based on a recent parameterization for the intrinsic recombination rate, which accounts for the dopant type and dopant density dependence of the Coulomb-enhanced Auger recombination rate at an arbitrary inj”
- Improved parameterization of Auger recombination in silicon (2012, methodology): “In this contribution we study the injection-dependent effective carrier lifetime applying advanced surface passivation techniques based on Al2O3 or SiNx We show that in some cases the measured lifetime data significantly exceeds the previously accepted intrinsic lifetime limit proposed by Kerr and C”
- Measuring and interpreting the lifetime of silicon wafers (2004, background): “In addition, Auger and band-to-band recombination also come into effect (Kerr and Cuevas, 2002c).”
- Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells (2013, methodology): “Next, the parameterization of the intrinsic recombination rate Rintr,K [7] is replaced by the recent parameterization Rintr,R [10].”