Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon

By D. Macdonald, L. J. Geerligs. 2004

482 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4808717dd5169737e48d63e9df3892b500f06465

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In Electrical and Electronic Engineering

1. R. Falster
2. V. Voronkov
3. K. Bothe
4. P. Cousins

Citations in the corpus

• P-Type Versus n-Type Silicon Wafers: Prospects for High-Efficiency Commercial Silicon Solar Cells (2006, methodology): “[8] D. MacDonald and L. J. Geerligs, “Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon,” Appl.”
• High-Efficiency n-Type HP mc Silicon Solar Cells (2017, unknown): “impurity concentration [6].”
• Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation (2014, background): “That said, the increased recombination activity at bulk interstitial iron in p-type material [30,45] could easily eliminate any possible advantage.”