Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior

By V. Kveder, M. Kittler, W. Schröter. 2001

229 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a4c59cb3266a2223022b713f319291ce287ebdeb

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. R. Falster
2. V. Voronkov
3. K. Bothe

In Electrical and Electronic Engineering

1. R. Falster
2. V. Voronkov
3. K. Bothe

Citations in the corpus

• Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation (2014, background): “It has been previously shown that the recombination activity of dislocation is strongly enhanced by contamination with metallic impurities [50,51].”