Overview on SiN surface passivation of crystalline silicon solar cells

By A. Aberle. 2001

418 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/026b14622b4569500e212f3de8f23ec5a31f1705

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. R. Falster
2. V. Voronkov
3. A. Münzer
4. K. Bothe
5. D. Neuhaus

In Materials Chemistry

1. A. Münzer
2. D. Neuhaus

Citations in the corpus

• Industrial Silicon Wafer Solar Cells (2007, methodology): “Hindawi Publishing Corporation Advances in OptoElectronics Volume 2007, Article ID 24521, 15 pages doi:10.1155/2007/24521 Review Article Industrial Silicon Wafer Solar Cells Dirk-Holger Neuhaus1 and Adolf Münzer2 1 Deutsche Cell GmbH, Berthelsdorfer Straße 111 A, 09599 Freiberg/Saxony, Germany 2 So”
• Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon (2009, background): “The additional positive fixed charge would be generated by the following configurations: O 3≡Si·, O2N≡Si· or ON2≡Si· [3].”
• Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation (2014, background): “However, these can be passivated by hydrogen [47,48], which is likely to be introduced into our samples during the PECVD surface passivation step [49].”
• High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide (2010, neutral): “, SiO2 [5], a-Si [6], a-SiNx [7], and a-SiCx [8]).”