Mechanisms of transition-metal gettering in silicon

By S. Myers, M. Seibt, W. Schröter. 2000

268 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3b3cd8e7d74d24d607b3a5f41cd50f9528bb184b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. R. Falster
2. V. Voronkov
3. K. Bothe

In Electrical and Electronic Engineering

1. R. Falster
2. V. Voronkov
3. K. Bothe

Citations in the corpus

• Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation (2014, background): “In silicon for microelectronics thermal processes are often used to force oxygen precipitation to provide gettering centres for harmful metallic contaminants [5,6].”
• Progress in Silicon Single-Photon Avalanche Diodes (2007, unknown): “The efforts were mainly directed to: 1) exploit specific gettering processes, as phosphorus diffusion and p/p segregation gettering [38] for removing metal impurities from the detector active volume, therefore reducing DCR and afterpulsing effects; and 2) employ a lower electric field strength withi”