Oxygen diffusion and precipitation in Czochralski silicon

By R. Newman. 2000

168 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f1161e1fb2553052673735d0a3c47e00b5941bb0

How researchers see this paper

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In Electrical and Electronic Engineering

1. R. Falster
2. V. Voronkov
3. K. Bothe

Citations in the corpus

• Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation (2014, background): “However, even in the highest quality Cz-Si, oxide precipitates can nucleate upon prolonged annealing at 650 1C to 850 1C [1,4].”