Hyungjun Kim
Materials Chemistry · 2003–2020
A researcher in the Science corpus: 6 papers; trusts 3 researchers and is trusted by 8 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 71 citations into it
- Electrical and Electronic Engineering — 70 citations into it; #4,603 of 16,539 by trust here, #6,008 by citations
Whom Hyungjun Kim trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Hyungjun Kim overall
Papers from Hyungjun Kim's perspective
Ordered by how strongly the researchers Hyungjun Kim trusts endorse each paper. Same corpus, a different order for every researcher.
- Energetics of native defects in ZnO
- Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition
- Hydrogen as a cause of doping in zinc oxide
- Carbon nanotubes as schottky barrier transistors. (Physical Review Letters)
- Atomic Layer Deposition of Platinum Thin Films
- Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization
- Controlling doping and carrier injection in carbon nanotube transistors
- On the performance limits for Si MOSFETs: a theoretical study
- Fabry - Perot interference in a nanotube electron waveguide (Nature)
- Carbon Nanotube Inter- and Intramolecular Logic Gates
Their papers
- Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing (2003) — 517 citations
- 2D Transition Metal Dichalcogenide Heterostructures for p‐ and n‐Type Photovoltaic Self‐Powered Gas Sensor (2020) — 213 citations
- Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells (2010) — 133 citations
- Applications of atomic layer deposition to nanofabrication and emerging nanodevices (2009) — 566 citations
- ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor (2008) — 158 citations
- High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO (2007) — 170 citations