Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization

By A. Kaloyeros, E. Eisenbraun. 2000

344 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/91ecae61277a2cc2a823d6b131cf4b710c8bf028

How researchers see this paper

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In Electrical and Electronic Engineering

1. Markku Leskelä
2. Mikko Ritala
3. S. Kassavetis
4. N. Kalfagiannis
5. Titta Aaltonen
6. Y. Chi
7. P. Patsalas

In Electronic, Optical and Magnetic Materials

1. P. Patsalas
2. N. Kalfagiannis
3. S. Kassavetis

In Mechanics of Materials

1. N. Kalfagiannis
2. S. Kassavetis
3. P. Patsalas

Citations in the corpus

• Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature (2004, background): “Furthermore, at lower deposition temperatures, noble metal films with lower degree of crystallization are produced,(18) possibly reducing the grain-boundary diffusion of copper through the noble metal barrier, as is the case with transition metal nitride barriers.(19) ALD processes for ruthenium, pl”
• Optical Properties and Plasmonic Performance of Titanium Nitride (2015, background): “are critical for alternative applications such as diffusion barriers in microelectronic devices [5–9], decorative coatings with bright golden color [10–13], ohmic contacts on III-nitride semiconductors [14–21] and Schottky contacts on Si [22,23].”