Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition
By H. Agura, A. Suzuki, T. Matsushita, T. Aoki, M. Okuda. 2003
441 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5fb23fcb008c07c41e79cafd1c9fbccfe49b422b
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- ZnO Devices and Applications: A Review of Current Status and Future Prospects (2010, background): “For example, resistivities as low as 0.85 � 10 � 4 � -cm and 0.81 � 10 � 4 � -cm have been obtained for ZnO : Al [ 42 ] and ZnO : Ga [43] thin films grown by pulsed laser”
- Intrinsic and extrinsic doping of ZnO and ZnO alloys (2016, background): “Agura et al claimed [135] to have deposited films with a resistivity as low as 8.”
- Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells (2010, background): “sol–gel process [14], pulsed laser deposition [15], atmospheric pressure chemical vapor deposition (APCVD) [16], low pressure chemical vapor deposition (LP-CVD) [17].”