Hydrogen as a cause of doping in zinc oxide

By V. Walle, G. Chris. 2000

1,962 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/78ff18da91702c78f758bcba96c0ffa58e491053

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In Electrical and Electronic Engineering

1. Hideo Ohno
2. Seong-Ju Park
3. Jang-Won Kang
4. K. Ellmer
5. A. Tsukazaki
6. Hyungjun Kim
7. Shoucheng Zhang
8. A. Bikowski

In Materials Chemistry

1. A. Tsukazaki
2. Yong Xu
3. K. He
4. Seong-Ju Park
5. D. Hwang
6. Jang-Won Kang
7. Yong‐Seok Choi
8. A. Ohtomo

Citations in the corpus

• Intrinsic and extrinsic doping of ZnO and ZnO alloys (2016, background): “The increase of the lattice constant is attributed to the incorporation of hydrogen into the ZnO lattice, which leads to an outward relaxation of the surrounding atoms independently of the specific lattice position and charge of the hydrogen [92].”