Laser‐fired rear contacts for crystalline silicon solar cells

By E. Schneiderlochner, R. Preu, R. Lüdemann, Stefan W. Glunz. 2002

333 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/582d1e25bd6a6af3520ad64305556f488cd64a0a

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In Electrical and Electronic Engineering

1. J. Benick
2. Stefan W. Glunz

Citations in the corpus

• Development of rear surface passivated Cu(In,Ga)Se2 thin film solar cells with nano-sized local rear point contacts (2013, background): “Characteristic surface passivation layers for p-type Si are a combination of aluminum oxide (Al2O3), silicon oxide (SiO2), and hydrogenated silicon nitride (SiNx:H) [8,9], while the micron-sized openings are generated industrially by applying laser technology [7,10,11].”
• High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide (2010, methodology): “In order to investigate the rear-surface passivation quality of the different dielectric layers (PA-ALD Al2O3, PECVD Al2O3, and thermal SiO2), PERC solar cells were fabricated [ 3 ] on � 100� 0.5-Ω · cm float-zone p-type c-Si wafers with a thickness of 250 μm. In order to define the inverted pyramid”