Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface

By G. Dingemans, F. Einsele, W. Beyer, Sanden van de Mcm, W. Kessels. 2012

159 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b43990d0537661a0caadf00c2cc3dd1d259ea6cb