Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells

By S. Dauwe, L. Mittelstädt, A. Metz, R. Hezel. 2002

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Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review (2016, background): “[11] attributed this effect to the high density of fixed positive charges within the SiNx layer when deposited onto a c-Si surface, inducing an inversion layer in the crystalline silicon underneath the SiNx .”
High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide (2010, background): “In contradiction, it is known that rear surfaces presenting a junction that can be shunted (e.g., an inversion layer induced by SiNx applied on p-type PERC) significantly suffer from a reduced EQE in the long-wavelength range under low bias illumination [ 17 ].”
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3 (2008, background): “In the case of high-positive-charge dielectrics, such as SiNx with fixed positive charge densities >10(12) cm (2), it was reported that Jsc is reduced by 1–2mA/cm(2) compared to the thermal SiO2 reference, due to the above-described parasitic shunting effect.(8,9) This effect is not expected in the ”