Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy

By H. Zhang, E. J. Miller, E. Yu. 2006

350 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4beed272dfcda4a391e44ad13907d3a3f89c49f0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Tomás Palacios
2. Min-Chul Sun
3. Yuhao Zhang
4. Daniel Piedra
5. T. Fujishima

In Condensed Matter Physics

1. Yuhao Zhang
2. Tomás Palacios
3. Min-Chul Sun
4. Daniel Piedra
5. T. Fujishima

In Electrical and Electronic Engineering

1. Yuhao Zhang
2. Tomás Palacios
3. Min-Chul Sun
4. Daniel Piedra
5. T. Fujishima

Citations in the corpus

• GaN-on-Si Vertical Schottky and p-n Diodes (2014, background): “related leakage paths [8], though more work is needed in this direction.”
• Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling (2013, background): “To understand the reverse leakage mechanism, PF emission is considered as has been reported earlier [11], [12].”