Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

By W. Saito, I. Omura, T. Ogura, H. Ohashi. 2004

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Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure (2007, unknown): “known to reduce the electric-field peaks [11].”
AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$ (2010, background): “aN-BASED heterostructure FETs (HFETs), owning properties of high sheet carrier density and high mobility in the 2-D electron gas (2-DEG) channel and large breakdown field strength, showed superior performance for high-power switching applications [1], [ 2 ].”
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (2013, background): “Although a comparison of the theoretical limit for on-resistance and breakdown voltage (Vbr) was presented in [12] for the two structures, the comparison on the heat dissipation capability and the resulting power density potential has not been carried out.”