Planar Nearly Ideal Edge-Termination Technique for GaN Devices

By A. M. Ozbek, B. Baliga. IEEE Electron Device Letters, 2011

132 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/064fc4177b61aa813960eb7324b7b9e8e6edd715

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Yuhao Zhang
2. Tomás Palacios
3. Min-Chul Sun
4. B. Baliga
5. Daniel Piedra
6. T. Fujishima

In Electrical and Electronic Engineering

1. Yuhao Zhang
2. Tomás Palacios
3. Yu Cao
4. Debdeep Jena
5. Min-Chul Sun
6. B. Baliga
7. Daniel Piedra
8. T. Fujishima

Citations in the corpus

• Gallium nitride devices for power electronic applications (2013, background): “using an argon implanted edge termination [14, 20].”
• 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon (2015, background): “4 MV/cm [6]) due to the aforementioned challenges in engineering the surface field in these diodes.”
• GaN-on-Si Vertical Schottky and p-n Diodes (2014, background): “7 MV/cm reported in GaN-on-GaN [3], [11], [12] and the theoretically predicted critical field 3.”
• High Voltage Vertical GaN p-n Diodes With Avalanche Capability (2013, unknown): “75 MV/cm in [8].”