Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

By H. Otake, K. Chikamatsu, A. Yamaguchi, T. Fujishima, H. Ohta. 2008

184 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/851214f49bc7ddc2c884a67f1f1d30c9dd3ee4a1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Tomás Palacios
2. Yuhao Zhang
3. Shu Yang
4. Kuang Sheng
5. Shaowen Han
6. Xiang Gao
7. Zhihong Liu
8. Kevin J. Chen

In Electrical and Electronic Engineering

1. Tomás Palacios
2. Yuhao Zhang
3. Shu Yang
4. Kuang Sheng
5. Zhihong Liu
6. Kevin J. Chen
7. Min-Chul Sun
8. Feng Gao

Citations in the corpus

• Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (2013, background): “1(a)] and bulk and channel mobility were set to the values reported in [11].”
• High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates (2017, background): “Some vertical GaN transistors have been demonstrated in the past few years, and they typically fall into two designs: current aperture vertical electron transistor (CAVET) ([13]–[15]) and trench MOSFET ( [16]–[20]).”
• Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “In the meantime, vertical GaN-on-GaN transistors with relatively high channel electron mobility have been reported recently [104], [105], which are desirable for low RCH/RON ratio and low susceptibility to VTH shift.”