An electron mobility model for wurtzite GaN

By Frank Schwierz. 2005

159 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/61257d8d991ee9f45cc83b03324c2588e9b89287

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Stanislav Vitanov
2. Rüdiger Quay
3. Stephan Maroldt
4. Zhihong Liu
5. Tomás Palacios
6. A. Maestrini
7. Bertrand Thomas
8. Goutam Chattopadhyay

In Condensed Matter Physics

1. Yuhao Zhang
2. Tomás Palacios
3. Zhihong Liu
4. Min-Chul Sun
5. Feng Gao
6. Stanislav Vitanov
7. Rüdiger Quay
8. Hyung-Seok Lee

In Electrical and Electronic Engineering

1. Yuhao Zhang
2. Tomás Palacios
3. Goutam Chattopadhyay
4. Stanislav Vitanov
5. Rüdiger Quay
6. Stephan Maroldt
7. Zhihong Liu
8. A. Maestrini

Citations in the corpus

• Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (2013, methodology): “The peak temperature location is observed at the gate edge of the drain side, which is consistent with previous reports for lateral HEMTs [16].”
• Schottky diode-based terahertz frequency multipliers and mixers (2010, background): “However, GaN has an electron mobility lower than GaAs, so conversion efficiencies are expected to be lower than those attained with GaAs-based frequency multipliers [40], [41].”
• High-temperature modeling of AlGaN/GaN HEMTs (2009, background): “Models proposed by other groups [47,52] are also displayed.”
• A Frequency-Multiplied Source With More Than 1 mW of Power Across the 840–900-GHz Band (2010, unknown): “diodes for submillimeter-wave multipliers [26], [27], it is clear that electronic coherent sources have the potential to deliver”