Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes

By J. M. Shah, Y. Li, T. Gessmann, E. Schubert. 2003

448 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/153cddfd02fa7ecaf46ebbd531ebbde7854ae9d7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Yuhao Zhang
2. Tomás Palacios
3. Min-Chul Sun
4. Daniel Piedra
5. T. Fujishima

In Electrical and Electronic Engineering

1. Yuhao Zhang
2. Tomás Palacios
3. Min-Chul Sun
4. Daniel Piedra
5. T. Fujishima
6. Jelena Vuckovic

Citations in the corpus

• GaN-on-Si Vertical Schottky and p-n Diodes (2014, background): “n is attributable to the relatively high Ohmic resistance on p-GaN [7].”
• Ultra-low Threshold electrically pumped quantum dot photonic crystal nanocavity laser (2011, result): “increases. We measure an ideality factor of 2.69 at room temperature. High ideality factors have been observed in GaN p-n junctions and have been attributed to rectifying metalsemiconductor junctions [S5]. We suspect that the metal contacts are no longer ohmic at low temperatures due to the low dopi”