Norihiko Kamata

Condensed Matter Physics · 2007–2014

A researcher in the Science corpus: 4 papers; trusts 1 researcher and is trusted by 4 researchers here, as inferred from the citation graph.

Subfields

• Condensed Matter Physics — 25 citations into it; #879 of 1,948 by trust here, #521 by citations
• Electronic, Optical and Magnetic Materials — 21 citations into it; #1,030 of 2,886 by trust here, #1,837 by citations
• Biomedical Engineering — 15 citations into it; #5,061 of 10,734 by trust here, #5,210 by citations

Whom Norihiko Kamata trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Hideki Hirayama

Who trusts Norihiko Kamata overall

1. Yosuke Nagasawa

Papers from Norihiko Kamata's perspective

Ordered by how strongly the researchers Norihiko Kamata trusts endorse each paper. Same corpus, a different order for every researcher.

1. Ultraviolet light-emitting diodes based on group three nitrides
2. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
3. AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
4. The emergence and prospects of deep-ultraviolet light-emitting diode technologies (Nature Photonics)
5. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
6. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
7. Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
8. A 271.8 nm deep-ultraviolet laser diode for room temperature operation (Applied Physics Express)
9. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
10. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

Their papers

• 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire (2007) — 339 citations
• Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer (2010) — 243 citations
• 222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire (2009) — 402 citations
• Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes (2014) — 415 citations