231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

By Hideki Hirayama, T. Yatabe, N. Noguchi, Tomoaki Ohashi, Norihiko Kamata. 2007

339 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/3082a40715065bf563bf9c456873102b275e7377

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Akira Hirano
2. Yosuke Nagasawa

In Electrical and Electronic Engineering

1. Murat Uysal
2. Julian Cheng
3. Zabih Ghassemlooy
4. Shlomi Arnon
5. Zhengyuan Xu
6. Theodoros A. Tsiftsis
7. Mohammad Ali Khalighi
8. David G. Voelz

In Electronic, Optical and Magnetic Materials

1. Akira Hirano
2. Yosuke Nagasawa

Citations in the corpus

• Emerging Optical Wireless Communications-Advances and Challenges (2015, background): “In recent decade, semiconductor devices in the UV range have been developed for LEDs sources and avalanche photodiodes (APD) [105], [106].”
• A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (2018, background): “Migration-enhanced MOCVD (MEMCVD) [25], ammonia pulse-flow method [70], and migration-enhanced epitaxy (MEE) [71] are based on a similar concept and their growth temperatures are generally lower than that required for continuous growth [31,72,73].”