High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

By Z. Bryan, I. Bryan, Jinqiao Xie, S. Mita, Z. Sitar, R. Collazo. 2015

142 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/435dda8cf2d9d1f1a8744e7828fefdfdc1ced5e4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. M. Kneissl
2. Akira Hirano
3. Yosuke Nagasawa
4. Matteo Meneghini
5. Hideki Hirayama
6. Ferdinand Scholz
7. J. Rass

In Electronic, Optical and Magnetic Materials

1. M. Kneissl
2. Akira Hirano
3. Yosuke Nagasawa
4. Matteo Meneghini
5. Ferdinand Scholz

In Materials Chemistry

1. M. Kneissl
2. Ferdinand Scholz

Citations in the corpus

• The 2020 UV emitter roadmap (2020, methodology): “The various point defect phenomena mentioned in the previous section manifest very important technological challenges to the implementation of Al-rich AlGaN-based optoelectronics: The strong dependence of internal quantum efficiency (IQE) and associated non-radiative recombination coefficient in the”
• A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (2018, background): “Based on this superficial understanding, the advantage of using AlN substrates is expected to result in a higher internal quantum efficiency (IQE) [60,61].”