Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

By H. Miyake, Chia-Hung Lin, Kentaro Tokoro, K. Hiramatsu. 2016

263 citations recorded by the source corpus.

Abstract The annealing of sputtered AlN films with different thicknesses grown on sapphire in nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were overlapped “face-to-face” to suppress the thermal decomposition of the AlN films. The sputtered AlN films with small grains consisted of columnar structure were initially aligned with (0002) orientation but became slightly inclined with increasing film thickness resulting in the formation of a two-layer structure. After annealing, films became a single crystalline layer regardless of the film thickness, and their crystallinity markedly improved after annealing at 1600–1700 °C. The full widths at half maximum of the (0002)- and (10 1 ¯ 2)-plane X-ray rocking curves were improved to 49 and 287 arcsec, respectively, owing to the annihilation of domain boundaries in the sputtered AlN films, which concurrently increased the compressive stress in the films.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9779e3ecdbb1dc8c7fece114f60e43d384606647

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In Condensed Matter Physics

1. M. Kneissl
2. Akira Hirano
3. Matteo Meneghini
4. Hideki Hirayama
5. Ferdinand Scholz
6. J. Rass

In Electronic, Optical and Magnetic Materials

1. M. Kneissl
2. Akira Hirano
3. Matteo Meneghini
4. Ferdinand Scholz

In Materials Chemistry

1. M. Kneissl
2. Ferdinand Scholz

Citations in the corpus

• The 2020 UV emitter roadmap (2020, background): “It also works if sputtered layers of initially low quality (high TDD) are subjected to HTA (figure 3).”