222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire

By Hideki Hirayama, S. Fujikawa, N. Noguchi, Jun Norimatsu, T. Takano, K. Tsubaki, Norihiko Kamata. 2009

402 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/b268fbb634a63adc50b2f7aeb53e8309ee049b58

How researchers see this paper

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In Biomedical Engineering

1. J. Hodgkinson
2. Akira Hirano
3. Ralph P. Tatam
4. Yosuke Nagasawa

In Condensed Matter Physics

1. Akira Hirano
2. Yosuke Nagasawa

In Electronic, Optical and Magnetic Materials

1. Akira Hirano
2. Yosuke Nagasawa

Citations in the corpus

• Optical gas sensing: a review (2012, background): “Recent spectral emission results of UV LED research, covering centre wavelengths from 211 to 282 nm: (a) AlGaN based LEDs, taken from [123], (b) an AlN based LED, taken from [124].”
• A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (2018, methodology): “The groups using EM reported the smooth surfaces of AlN with stepflow [71,113] to make LEDs.”