Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
By Hideki Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, Norihiko Kamata. 2014
415 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/49a8c652b56c0295d4a9f8fa2ceefeaa2cbc6f98
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In Biomedical Engineering
In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (2018, methodology): “It has been claimed that 2 × 108/cm2 is good enough to obtain a satisfactory IQE [24,41] for the flat QWs, showing AlN bulk substrate with TDD of less than 106/cm2 is over quality.”