AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

By N. Susilo, S. Hagedorn, D. Jaeger, H. Miyake, U. Zeimer, C. Reich, B. Neuschulz, L. Sulmoni, M. Guttmann, F. Mehnke and 4 more. 2018

186 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/220f2703a759b151241946365decf18cb3b349e5

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. M. Kneissl
2. Akira Hirano
3. Matteo Meneghini
4. Hideki Hirayama
5. Ferdinand Scholz
6. J. Rass

In Electronic, Optical and Magnetic Materials

1. M. Kneissl
2. Akira Hirano
3. Matteo Meneghini
4. Ferdinand Scholz

In Materials Chemistry

1. M. Kneissl
2. Ferdinand Scholz

Citations in the corpus

• The 2020 UV emitter roadmap (2020, background): “While a proof of principle has been given [15], further studies of process reproducibility and resulting device lifetime are necessary before this approach can be considered as validated.”
• A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (2018, unknown): “AlGaN-based NUV- (λ = 350 nm) and DUV-LEDs (λ = 268 nm) have been demonstrated [47] using this new AlN templates.”