Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

480 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review (2014, background): “Being in conflict with existing theories [9-11], the above phenomenon cannot be, nevertheless, considered as unphysical.”
Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, background): “Various possible explanations were proposed as the mechanism for the efficiency droop in high power nitride LEDs as follows: 1) decreased carrier localization at In-rich regions at high injection densities [1]; 2) carrier leakage [17]–[23]; 3) hole transport impediment and consequent electron leakag”
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “Several mechanisms have been proposed as the origin of efficiency droop, including Auger recombination [2]–[4], electron leakage [5], [6], and carrier delocalization to defects [7].”
The 2020 UV emitter roadmap (2020, background): “Ab initio simulations for determining material and model parameters have given many valuable data for the device simulation community, such as Auger coefficients for GaN [167], or dopant activation in AlGaN.”