A 271.8 nm deep-ultraviolet laser diode for room temperature operation

By Ziyi Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. Schowalter, C. Sasaoka, H. Amano. Applied Physics Express, 2019

259 citations recorded by the source corpus.

We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8 nm with a pulsed duration of 50 ns and a repetition frequency of 2 kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics

View Paper: https://www.semanticscholar.org/paper/85a08ee6287d3ce3d2cf57d3955bd3f73928b1b6

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In Biomedical Engineering

1. Akira Hirano
2. M. Kneissl
3. Matteo Meneghini
4. Hideki Hirayama
5. Ferdinand Scholz

In Condensed Matter Physics

1. M. Kneissl
2. Akira Hirano
3. Matteo Meneghini
4. Hideki Hirayama
5. Ferdinand Scholz
6. J. Rass

Citations in the corpus

• The 2020 UV emitter roadmap (2020, background): “(a) Previously published threshold current densities of current injection laser diodes [190] with data added from [190, 204, 206].”