Santosh Kumar Vishvakarma
IEEE transactions on nanotechnology · 2014
A researcher in the Science corpus: 1 paper; trusts 0 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
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Papers from Santosh Kumar Vishvakarma's perspective
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- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)
- Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design
- Tunnel field-effect transistor without gate-drain overlap
- Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits (Proceedings of the IEEE)
- Influence of device engineering on the analog and RF performances of SOI MOSFETs
- Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope (2008 IEEE International Electron Devices Meeting)
- Tunneling Field-Effect Transistor: Capacitance Components and Modeling (IEEE Electron Device Letters)
- Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization
- Channel noise modeling of deep submicron MOSFETs
- Fundamentals of Carrier Transport, 2nd edn