Influence of device engineering on the analog and RF performances of SOI MOSFETs

By V. Kilchytska, A. Nève, L. Vancaillie, D. Levacq, S. Adriaensen, H. Meer, K. Meyer, C. Raynaud, M. Dehan, J. Raskin and 1 more. 2003

231 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2b4240c8d3873158c7230bf1f8d36585880e4129

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Vikas Vijayvargiya
2. Santosh Kumar Vishvakarma

Citations in the corpus

• Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance (2014, background): “cies are achieved in the range of gigahertz, making it suitable for wireless and other radio-frequency (RF) applications [1], [2].”