Tunneling Field-Effect Transistor: Capacitance Components and Modeling

By Yue Yang, X. Tong, Litao Yang, P. Guo, L. Fan, Y. Yeo. IEEE Electron Device Letters, 2010

222 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/754cb82e4ec705bc72cddd55376177e7c101b787

How researchers see this paper

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In Electrical and Electronic Engineering

1. Vikas Vijayvargiya
2. Santosh Kumar Vishvakarma

Citations in the corpus

• Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance (2014, background): “As gate-to-source (Vgs) voltage increases, formation of inversion takes place and it increases from inversion layer forms drain toward source below the gate dielectric for fixed drain voltage [30].”