Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

By E. Toh, G. Wang, G. Samudra, Y. Yeo. 2007

140 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8247b7d31a03cac9969c581a796dd1774793bf61

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In Electrical and Electronic Engineering

1. Vikas Vijayvargiya
2. Santosh Kumar Vishvakarma

Citations in the corpus

• Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance (2014, methodology): “The major hurdles in the TFET operation are low ION current [19] and ambipolar behavior as reported in the literature.”