Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design

By Christian C. Enz, Eric A. Vittoz. 2006

374 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/0206aac2732a45f474555ff5671d31f464993a8a

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1. Arnout Beckers
2. Vikas Vijayvargiya
3. Farzan Jazaeri
4. Santosh Kumar Vishvakarma
5. Christian C. Enz

Citations in the corpus

• Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance (2014, methodology): “The two fringing capacitance calculation is performed by adjusting expression reported in [29], and are approximated by total input capacitance (CGG = CGS + CGD), can be extracted from ac simulation as”
• Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K (2018, methodology): “The analog figures-of-merit are obtained using the simplified and normalized EKV compact model [24]–[26].”