Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance
By Vikas Vijayvargiya, Santosh Kumar Vishvakarma. IEEE transactions on nanotechnology, 2014
167 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/40697979cfbd9133ab156412b5975c7e10e9c1be
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In Electrical and Electronic Engineering
- Gerhard Klimeck
- Joerg Appenzeller
- Hesameddin Ilatikhameneh
- B. Novaković
- Rajib Rahman
- Yaohua Tan
- Alan C. Seabaugh
Citations in the corpus
- Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials (2015, background): “Notice that the drain region is usually doped less than the source region to suppress the pbranch in the I-V characteristics and improve the OFFstate performance of the TFET [39].”