Channel noise modeling of deep submicron MOSFETs

By Chih-Hung Chen, M. Deen. 2002

153 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/244ba11d5d0020c7f4d38be76d85b80114fa9271

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Eric A. Vittoz
2. Christian C. Enz
3. M. J. Deen
4. Yuhua Cheng
5. Chih-Hung Chen

Citations in the corpus

• MOSFET modeling for RF IC design (2005, methodology): “There are two physical reasons proposed to explain the noise enhancement based on this two-section model – extra noise from region II due to the hot-electron effect [43], [44] and the channel length modulation (CLM) effect in region I [45]–[47].”
• Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design (2006, methodology): “The square and circle symbols represent measurements taken from [130] and [117] respectively.”