Tor A. Fjeldly
Condensed Matter Physics · 2003–2019
A researcher in the Science corpus: 4 papers; trusts 1 researcher and is trusted by 2 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 5 citations into it; #1,535 of 1,948 by trust here, #1,699 by citations
Whom Tor A. Fjeldly trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Tor A. Fjeldly overall
Papers from Tor A. Fjeldly's perspective
Ordered by how strongly the researchers Tor A. Fjeldly trusts endorse each paper. Same corpus, a different order for every researcher.
- GaN-Based RF Power Devices and Amplifiers (Proceedings of the IEEE)
- Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges (IEEE Journal of Emerging and Selected Topics in Power Electronics)
- A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices (IEEE Transactions on Electron Devices)
- On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface
- Trapping effects and microwave power performance in AlGaN/GaN HEMTs
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Use of negative capacitance to provide voltage amplification for low power nanoscale devices. (Nano letters (Print))
- Negative capacitance in a ferroelectric capacitor. (Nature Materials)
- Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
- 40-W/mm Double Field-plated GaN HEMTs (Device Research Conference)
Their papers
- ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model (2019) — 137 citations
- Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices (2012) — 151 citations
- A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices (2011) — 203 citations
- Device Modeling for Analog and RF CMOS Circuit Design (2003) — 140 citations