Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

By Asif Islam Khan, D. Bhowmik, P. Yu, Sung Joo Kim, Xiaoqing Pan, Ramamoorthy Ramesh, Sayeef Salahuddin. 2011

327 citations recorded by the source corpus.

We report a proof-of-concept demonstration of negative capacitance effect in a nanoscale ferroelectric-dielectric heterostructure. In a bilayer of ferroelectric Pb(Zr0.2Ti0.8)O3 and dielectric SrTiO3, the composite capacitance was observed to be larger than the constituent SrTiO3 capacitance, indicating an effective negative capacitance of the constituent Pb(Zr0.2Ti0.8)O3 layer. Temperature is shown to be an effective tuning parameter for the ferroelectric negative capacitance and the degree of capacitance enhancement in the heterostructure. Landau’s mean field theory based calculations show qualitative agreement with observed effects. This work underpins the possibility that by replacing gate oxides by ferroelectrics in nanoscale transistors, the sub threshold slope can be lowered below the classical limit (60 mV/decade).

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d8729853621756d45f61329c26f9111d9ae0a512

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Citations in the corpus

Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor (2016, background): “tive capacitance behavior, where the negative capacitance state is stabilized by the depolarization field of the series capacitor [1], [3], [13], [14].”
Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics (2016, background): “bilayers [4], [5]; and 3) superlattices [6] and ferroelectricgated transistors [7]–[9].”