Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

By Sourabh Khandelwal, Yogesh Singh Chauhan, Tor A. Fjeldly. IEEE Transactions on Electron Devices, 2012

151 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c5a7e53d1562777fa31a36d22e356d13ea34635d

Citations in the corpus

• ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model (2019, unknown): “This has been described in our earlier works [13]–[15].”