A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

By Sourabh Khandelwal, N. Goyal, Tor A. Fjeldly. IEEE Transactions on Electron Devices, 2011

203 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/13b9bf406ea0bdce98ae6638b2a5f6d4a05c9a3a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Yogesh Singh Chauhan
2. Sourabh Khandelwal
3. Tor A. Fjeldly

In Condensed Matter Physics

1. Yogesh Singh Chauhan
2. Sourabh Khandelwal
3. Tor A. Fjeldly

In Electronic, Optical and Magnetic Materials

1. Yogesh Singh Chauhan
2. Sourabh Khandelwal
3. Tor A. Fjeldly

Citations in the corpus

• ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model (2019, background): “These regions are defined based on the position of the Fermi level with respect to the energy levels in the quantum well (see [13] and [14] for more details on these regions).”
• Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices (2012, methodology): “A typical value of Voff = −3 V is used [15].”