On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface

By G. Koley, M. Spencer. 2005

136 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8047548190a18fc58ea109cc82c1ceb6dede5575

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In Condensed Matter Physics

1. Yogesh Singh Chauhan
2. Sourabh Khandelwal
3. Tor A. Fjeldly

In Electronic, Optical and Magnetic Materials

1. Yogesh Singh Chauhan
2. Sourabh Khandelwal
3. Tor A. Fjeldly

Citations in the corpus

• ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model (2019, background): “In fact, only over the past decade or so, experimental results have shown that the density of ionized donor states is distributed over a finite energy range instead of being in a narrow spike pinned at the surface Fermi level [20], [21].”