Subhadeep Mukhopadhyay

Electrical and Electronic Engineering · 2013

A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Subhadeep Mukhopadhyay trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Tibor Grasser (in Electrical and Electronic Engineering)

Papers from Subhadeep Mukhopadhyay's perspective

Ordered by how strongly the researchers Subhadeep Mukhopadhyay trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  2. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  3. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
  4. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
  5. A two-stage model for negative bias temperature instability (IEEE International Reliability Physics Symposium)
  6. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
  7. Two independent components modeling for Negative Bias Temperature Instability (IEEE International Reliability Physics Symposium)
  8. A comprehensive framework for predictive modeling of negative bias temperature instability (2004 IEEE International Reliability Physics Symposium. Proceedings)
  9. NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] (IEEE International Electron Devices Meeting 2003)
  10. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)

Their papers