Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides

By M. Turowski, A. Raman, peixiong zhao. IEEE Transactions on Nuclear Science, 2004

154 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/649bdb9b34275f8ff3c5f4e66a218d8eb27fcd06

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In Electrical and Electronic Engineering

1. D. Fleetwood
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Citations in the corpus

• Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, methodology): “factors influence charge trapping in isolation oxides and its coupling to MOS transistors, devices can still fail at low doses due to TID-induced leakage currents [6], [79]–[83], unless special design and/or process techniques are”
• Total-Ionizing-Dose Effects in Modern CMOS Technologies (2006, background): “The relationship in (6) indicates that as the gate oxides of advanced CMOS technologies are scaled to thinner dimensions, the threat of shifts in dc parameters due to buildup in the gate oxide is reduced [30], [31].”