Radiation hardness of gallium nitride
By A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, H. Bardeleben, J. Cantin, S. Raymond. 2002
306 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Condensed Matter Physics, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/0aa2b9372ecd6fe374f74fb9b31a77ed98922ffd
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In Biomedical Engineering
In Condensed Matter Physics
In Mechanics of Materials
Citations in the corpus
- Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors (2003, background): “These devices can be more radiation tolerant than gallium-arsenide-based devices because of a higher displacement threshold energy ( ), which is inversely proportional to the lattice constant [1]‐[ 3 ].”