Total-Ionizing-Dose Effects in Modern CMOS Technologies

By Hugh J. Barnaby. IEEE Transactions on Nuclear Science, 2006

647 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/534b623fda4c6dedafd476ebf114c48025607093

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In Electrical and Electronic Engineering

1. D. Fleetwood

Citations in the corpus

• Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, background): “, HfO2) that initially were thicker, more defective, and contained a higher percentage of electron traps than highquality SiO2 gate oxides [2], [4], [8]–[10], [104]–[107].”