Lateral interband tunneling transistor in silicon-on-insulator

By C. Aydin, A. Zaslavsky, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, S. Deleonibus. 2004

147 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/260794bf012c25a21992112dbcdae61a18ad6e5a

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In Electrical and Electronic Engineering

Citations in the corpus

Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs (2008, background): “being actively investigated due to their potential for low standby leakage [ 5-12 ].”
On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors (2010, background): “ventional TFETs where the tunnel barrier dominates the overall device conductance [4], [5], [9], it can become a performance”
Low-subthreshold-swing tunnel transistors (2006, background): “reported, which explore the use of the field effect to gate an interband tunneling current [2]–[7].”
Low-Voltage Tunnel Transistors for Beyond CMOS Logic (2010, unknown): “[33] reported the characteristics of a lateral SOI embodiment of the TFET.”
The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor (2008, methodology): “Although the simulation issues involving the tunneling mass, the effective tunneling distance and indirect tunneling with regard to data fitting have been discussed before ([13], [22]), it is important to note here that to first order, the calibration performed with recent tunnel diode data incorpor”
Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering (2005, methodology): “HREE-TERMINAL gated p-i-n diodes based on band-to-band tunneling have been demonstrated as possible candidates for future CMOS technologies [1]–[ 6 ].”
Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits (2009, background): “Although different T-FET structures have been reported in the literature [9], [10], [19], and a vertical n-type”