Jerry L. Hudgins
Electrical and Electronic Engineering · 2003–2010
A researcher in the Science corpus: 4 papers; trusts 1 researcher and is trusted by 3 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 7 citations into it; #8,529 of 16,539 by trust here, #8,489 by citations
Whom Jerry L. Hudgins trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Jerry L. Hudgins overall
Papers from Jerry L. Hudgins's perspective
Ordered by how strongly the researchers Jerry L. Hudgins trusts endorse each paper. Same corpus, a different order for every researcher.
- An assessment of wide bandgap semiconductors for power devices
- A thermal model for insulated gate bipolar transistor module (IEEE transactions on power electronics)
- Predicting solder joint reliability for thermal, power, and bend cycle within 25% accuracy (2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220))
- I and i
- Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models (IEEE transactions on power electronics)
- High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)
- Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs (IEEE Electron Device Letters)
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (IEEE Electron Device Letters)
- Very-high power density AlGaN/GaN HEMTs
- Electrical breakdown in atmospheric air between closely spaced (0.2 /spl mu/m-40 /spl mu/m) electrical contacts (Proceedings of the Forth-Seventh IEEE Holm Conference on Electrical Contacts (IEEE Cat. No.01CH37192))
Their papers
- Transient Electrothermal Simulation of Power Semiconductor Devices (2010) — 158 citations
- An assessment of wide bandgap semiconductors for power devices (2003) — 539 citations
- Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation (2006) — 153 citations
- Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models (2006) — 135 citations