A thermal model for insulated gate bipolar transistor module

By Zhaohui Luo, Hyungkeun Ahn, M. Nokali. IEEE transactions on power electronics, 2004

135 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/1ea7bbbfb80f79c20781649f5c42698323ffa46a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Bin Du
2. Lea Dorn-Gomba
3. Ali Emadi
4. Yihua Hu
5. John Reimers
6. A. Bryant
7. Patrick R. Palmer
8. Enrico Santi

In Mechanical Engineering

1. Xueguan Song

Citations in the corpus

• Transient Electrothermal Simulation of Power Semiconductor Devices (2010, background): “For example, an extension of the traditional RC network for the junction-to-case system to a case-to-ambient (via a heat sink) system has been shown to adequately describe steady-state and long-pulse operation in insulated gate bipolar transistor (IGBT) modules [2].”
• In Situ Diagnostics and Prognostics of Solder Fatigue in IGBT Modules for Electric Vehicle Drives (2015, background): “With regard to IGBTs, major wear-out failures are bondwire lift-off and baseplate solder fatigue [24], [25].”
• Automotive Traction Inverters: Current Status and Future Trends (2019, background): “as they require advanced loss and thermal models [40]–[43].”