Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

By A. Bryant, Xiaosong Kang, Enrico Santi, Patrick R. Palmer, Jerry L. Hudgins. IEEE transactions on power electronics, 2006

135 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/90c9413fde25d51b908fff8452ffbc29e50fe64b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. P. Mawby
2. Hui Huang
3. A. Bryant
4. Patrick R. Palmer
5. Enrico Santi
6. Jerry L. Hudgins
7. Frede Blaabjerg

Citations in the corpus

• A Lifetime Estimation Technique for Voltage Source Inverters (2013, methodology): “A simple two-step parameter extraction method for the device models is described in [10] and its accuracy at different temperatures is shown in [11].”
• Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation (2006, methodology): “Here, the Fourier-based solution models of the p-i-n diode and IGBT are used [25]‐[27], which is due to their high accuracy, compact implementation, ability to simulate device aspects such as local lifetime control and field-stop technology, and their welldefined parameter extraction process [ 28 ].”