Toshikazu Nishida

IEEE Transactions on Electron Devices · 2002–2015

A researcher in the Science corpus: 5 papers; trusts 0 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Papers from Toshikazu Nishida's perspective

Ordered by how strongly the researchers Toshikazu Nishida trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs (IEEE International Electron Devices Meeting 2003)
  2. Fundamentals of Carrier Transport, 2nd edn
  3. Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)
  4. Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)
  5. Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  6. Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))
  7. BOUNDARY LAYER SEPARATION CONTROL WITH DIRECTED SYNTHETIC JETS
  8. Interaction of a Synthetic Jet with a Flat Plate Boundary Layer
  9. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
  10. On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit? (IEEE Electron Device Letters)

Their papers